Next-Gen Technology Computer Aided Design

Real-Time Engineering with GPU-Accelerated Multiphysics

Morphorm - May 30, 2025

A New Era of Design Simulation

At Morphorm, we are transforming how next-generation semiconductors and energy systems are engineered. Our latest release features a GPU-accelerated Technology Computer Aided Design (TCAD) platform capable of simulating the coupled thermal, electrical, and mechanical physical interactions in a semiconductor device – all in a unified and fast computational environment. This leap in simulation technology empowers engineers to move beyond traditional trade-offs between accuracy and speed while accelerating innovation from concept to validation.

Blazing Fast with GPU Acceleration

Traditional simulation workflows are often slow and fragmented. Our proprietary solver leverages the full power of parallel GPU computing, providing:

Up to 20x – 30x speedup over CPU-based methods
Real-time feedback for iterative design
Seamless support for large-scale, high-fidelity multiphysics models

Multiphysics: Where Innovation Happens

Modern semiconductor devices are tightly coupled systems where thermal, electrical, and mechanical effects interact nonlinearly. Our software bridges these disciplines in a single simulation through:

Electro-Thermal Coupling - Capture hot spots, Joule heating, and electrostatics simultaneously
Nonlinear Material Behavior - Model realistic behavior with support for elastic and inelastic response
Thermo-Mechanical Coupling - Predict stress, strain, and warping induced by temperature gradients due to Joule heating

The result? A true predictive, scalable, and fast multiphysics simulation platform for semiconductor devices.

What Can You Model?

Our platform powers innovation across industries:

Semiconductors - Evaluate leakage, breakdown, and self-heating effects in transistors
Power Electronics - Simulate electro-thermo-mechanical reliability under external loads
Microelectromechanical Systems (MEMS) - Design for coupled physical responses with precision

Design Optimization Reimagined

Built-in adjoint-based optimization lets users design for performance - not just feasibility:

Shape and topology optimization
Multiphysics-based performance criteria
Support for uncertainty quantification

Make bold design choices. Let the software handle the complexity.

Inside the Engine

The software is built on top of a rich foundation of advanced numerical methods:

Advanced Newton-Raphson solvers for nonlinear partial differential equations
Support for drift-diffusion, nonlinear Poisson, heat transfer, and elasticity
Isothermal and non-isothermal modeling
Full support for degenerate semiconductor physics

Figure 1. Finite element model of a diode based on a p-n junction used to simulate coupled electrical, thermal, and mechanical behavior. A p-n junction consists of p-type and n-type semiconductor materials joined within a single crystal. The n-type region contains mobile electrons, while the p-type region contains mobile electron holes. At the junction, a depletion region forms as electrons and holes recombine, enabling current to flow predominantly in one direction. The left panel shows the finite element mesh, including Ohmic contact boundary conditions applied at the anode and cathode, with an external bias voltage of 0.0 V. The right panel highlights the application of a fixed surface charge of 1x10^14 C/cm^2 on the top red and blue surfaces. Charge carrier behavior is modeled using a Fermi-Dirac distribution, with donor and acceptor concentrations of 1x10^20 cm^-3. Thermal boundary conditions fix the temperature at 300 K on the anode and cathode, while mechanical boundary conditions constrain their displacement. The simulation uses material properties corresponding to Silicon.

Example Spotlight: p-n Diode Simulation

This example demonstrates a finite element simulation of a p-n diode, capturing the coupled electrical, thermal, and mechanical behavior of a semiconductor device under realistic operating conditions. The diode structure consists of p-type and n-type regions – each doped to a concentration of 1x10^20 cm^-3 – joined within a single silicon crystal. At their interface, a depletion region forms due to the recombination of mobile electrons (n-type) and holes (p-type), enabling current to flow predominantly in one direction.

The left panel in Figure 1 shows the finite element mesh, featuring Ohmic contact boundary conditions at the anode and cathode, and a zero-bias voltage applied externally. The right panel illustrates the application of a fixed surface charge of 1x10^14 C/cm^2 on the top red and blue surfaces. Charge carrier distributions follow Fermi-Dirac statistics, ensuring accurate modeling of non-ideal behavior at high doping levels.

Boundary conditions include fixed thermal temperatures of 300 K and fixed mechanical constraints of 0 cm on displacement at both terminals. This example highlights Morphorm’s ability to perform high-fidelity, multiphysics simulations of semiconductor devices, revealing detailed insight into carrier transport, localized heating, and stress-induced effects under tightly coupled physical phenomena, see Figure 2.

Figure 2. Simulated multiphysics results from the Morphorm Semiconductor Simulation Module. The top panel displays the spatial distributions of electric potential (V), electron concentration (cm^-3), and hole concentration (cm^-3) across the diode structure, from left to right. The bottom panel shows the corresponding temperature field (K) and displacement field (cm). Elevated temperatures are observed near the surface with applied fixed charge, resulting from Joule heating. This localized heating induces greater thermal gradients, leading to increased mechanical deformation and larger displacements near the same region.

Join Us in Shaping the Future of Engineering Simulation

At Morphorm, we’re building the tools that will power the next generation of digital engineering. If you’re ready to transform your simulation workflows with real-time, structure-preserving, AI-powered simulations, we’d love to hear from you.

Stay in the Loop!

Subscribe to get the latest news, product updates, and exclusive event invitations – delivered straight to your inbox. Be the first to know what’s next.

About Morphorm

Morphorm® is an emerging leader in engineering simulation and modeling technologies. Founded in 2022 and headquartered in Albuquerque, New Mexico, Morphorm is advancing state-of-the-art optimization and simulation technologies to drive product innovation in clean energy, semiconductors, and defense. The company’s pioneering real-time design solutions are setting new industry benchmarks in performance and efficiency. To learn more, visit www.morphorm.com.

CONTACT: info@morphorm.com

SOURCE: Morphorm